DescriptionTrack Etch Threshold and Thermal Conductivity.jpg
English: Track-etch threshold and thermal conductivity of ionic crystals. The amorphous metal FeBSiC is included for comparison.
Date
Source
LiF data:
Kotomin, E. A.; Kashcheyevs, V.; Kuzovkov, V. N.; Schwartz, K.; Trautmann, C.; Modeling of primary defect aggregation in tracks of swift heavy ions in LiF; Physical Review B: Condensed Matter and Materials Physics (2001), 64(14), 144108/1-144108/7
FeBSiC data:
C. Trautmann, R. Spohr, M. Toulemonde; Stopping power dependence of ion track etching in amorphous metallic Fe81B13.5Si3.5C2; Nuclear Inst. and Methods in Physics Research B 83(1993) 513-517
All other data:
A. Sigrist, R. Balzer; Untersuchungen zur Bildung von Tracks in Kristallen; Helv. Phys. Acta 50 (1977)49
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